GS61004B 100V 38A Bottom-side Cooled GaN Transistor

GS61004B in stock. GaN FETs 100V 38V GaN E-mode GaNPX package bottom-side cooled

Features 
• 100V enhancement mode power transistor 
• Bottom-side cooled configuration  
• RDS(on) = 16 mΩ 
• IDS(max) = 38 A 
• Ultra-low FOM Island Technology® die 
• Low inductance GaNPX® package 
• Simple gate drive requirements (0 V to 6 V)  
• Transient tolerant gate drive (-20 V / +10 V) 
• Very high switching frequency (> 10 MHz) 
• Fast and controllable fall and rise times 
• Reverse current capability 
• Zero reverse recovery loss 
• Small 4.6 x 4.4 mm2 PCB footprint 
• RoHS 3 (6+4) compliant 

Applications 
• Enterprise and networking power  
• Uninterruptable power supplies  
• Industrial motor drives 
• Solar power 
• Fast battery charging 
• Class D audio amplifiers 
• Smart home 
• Wireless Power Transfer