GS61008P 100V 90A Bottom-side Cooled GaN Transistor

GS61008P in stock. GaN FETs 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled.

Features 
• 100 V enhancement mode power transistor 
• Bottom-side cooled configuration  
• RDS(on) = 7 mΩ  
• IDS(max) = 90 A 
• Ultra-low FOM die 
• Low inductance GaNPX® package 
• Simple gate drive requirements (0 V to 6 V) 
• Transient tolerant gate drive (-20 V / +10 V) 
• Very high switching frequency (> 10 MHz) 
• Fast and controllable fall and rise times 
• Reverse current capability 
• Zero reverse recovery loss 
• Small 7.6 x 4.6 mm2 PCB footprint 
• Source Sense (SS) pin for optimized gate drive 
• RoHS 3 (6 + 4) compliant 

Applications 
• Energy Storage Systems 
• AC-DC Converters (secondary side) 
• Uninterruptable Power Supplies  
• Industrial Motor Drives 
• Fast Battery Charging 
• Class D Audio amplifiers  
• Traction Drive 
• Robotics 
• Wireless Power Transfer